Laterally coupled self-assembled InAs quantum dots embedded in resonant tunnel diode with multigate electrodes

被引：34

作者：

Amaha, S. ^{[1
]}

Hatano, T. ^{[1
]}

Teraoka, S. ^{[1
]}

Shibatomi, A. ^{[1
]}

Tarucha, S. ^{[1
,2
]}

Nakata, Y. ^{[3
]}

Miyazawa, T. ^{[3
]}

Oshima, T. ^{[3
]}

Usuki, T. ^{[3
]}

Yokoyama, N. ^{[3
]}

机构：

[1] JST, ICORP, Quantum Informat Project, Kanagawa 2430198, Japan

[2] Univ Tokyo, Dept Engn, Sch Appl Engn, Tokyo 1130086, Japan

[3] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期

关键词：

D O I：

10.1063/1.2920205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the electronic properties of submicron vertical resonant tunneling structures containing several self-assembled InAs quantum dots (SADs) surrounded by four gate electrodes. The four gates are designed not only to squeeze the conductive channel containing a few SADs but also to differently modulate the electrochemical potential of each SAD. We measure the stability diagram and distinguish the features of lateral interdot coupling, such as the type of coupling (quantum mechanical or capacitive), the number of coupled dots, and the relative coupled dot position. This technique will be useful in characterizing the electronic properties of coupled SAD systems. (C) 2008 American Institute of Physics.

引用

页数：3

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