Multiple gated InAs dot ensembles

被引：30

作者：

Austing, DG

Tarucha, S

Main, PC

Henini, M

Stoddart, ST

Eaves, L

机构：

[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Kanagawa 2430198, Japan

[2] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[3] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.124477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We adapt a multiple gating technology to characterize electrically an ensemble of "self-assembled" InAs dots embedded in a plane within an Al0.20Ga0.80As tunneling barrier. Although the mu m-sized mesa incorporates several hundred dots, we find that only a few of them contribute to the current close to threshold. Gating allows us to probe the origin of the sharp current peaks, and we can classify these peaks into families in a simple way according to their gate voltage dependence. (C) 1999 American Institute of Physics. [S0003-6951(99)01431-X].

引用

收藏

页码：671 / 673

页数：3

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