Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states

被引：124

作者：

Narihiro, M

Yusa, G

Nakamura, Y

Noda, T

Sakaki, H

机构：

[1] JRDC,QUANTUM TRANIST PROJECT,MEGURO KU,TOKYO 153,JAPAN

[2] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 01期

关键词：

D O I：

10.1063/1.119276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resonant tunneling of electrons through a 20 nm scale InAs quantum dot bound by a pair of very thin AlAs barriers is studied. A well-resolved composite peak resulting from the ground Is states was observed at 4.2 K in current-voltage characteristics. By investigating the effects of inplane magnetic fields, the shape of the wave function and the spatial extent of the first two electronic states are clarified. (C) 1997 American Institute of Physics.

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页码：105 / 107

页数：3

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