High-quality InGaAsN growth by metalorganic vapor-phase epitaxy using nitrogen carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors

被引：18

作者：

Ougazzaden, A ^{[1
]}

Rao, E ^{[1
]}

Sermage, B ^{[1
]}

Leprince, L ^{[1
]}

Gauneau, M ^{[1
]}

机构：

[1] CNET, DTD, France Telecom, F-92225 Bagneux, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

InGaAsN; GaAsN; dimethylhydrazine; photoluminescence;

D O I：

10.1143/JJAP.38.1019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully grown GaAsN and InGaAsN layers on GaAs substrate using atmospheric-pressure metalorganic vapor-phase epitaxy (MOVPE). Dimethylhydrazine and tertiarybutylarsine have been employed as sources of nitrogen and arsenic, respectively. To investigate the incorporation behavior of nitrogen [N] in GaAsN and InGaAsN layers as a function of ambient gas in the reactor, growth was performed in the presence of hydrogen H-2 and nitrogen N-2 gases. Good structural quality and surface morphology have been obtained with both gases. Furthermore, with N-2 ambient gas, an enhancement of nitrogen incorporation has been observed. The nonradiative carrier lifetime is about 25 ns and is independent of the ambient gas used. This value is acceptable for laser applications.

引用

页码：1019 / 1021

页数：3

共 5 条

[1]

HASENOHRL S, 1995, P EW MOVPE 6 C GENT, pD12

[2]

KOBAYASHI N, 1997, P INT C MRS FALL 97

[3] Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine [J].