Conductivity in transparent anatase TiO2 films epitaxially grown by reactive sputtering deposition

被引:72
作者
Jeong, BS
Norton, DP
Budai, JD
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
关键词
D O I
10.1016/S0038-1101(03)00210-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The synthesis of semiconducting TiO2 thin films deposited by reactive sputtering is discussed. In particular, defect doping of the anatase polymorph that is epitaxial stabilized on (0 0 1) LaAlO3 was explored using either oxygen or water vapor as the oxidizing species. For films grown in oxygen, a transition from insulating to metallic conductivity of the films is observed as the O-2 pressure is reduced. X-ray diffraction measurements show the presence of the TinO2n-1 phase when the oxygen pressure is reduced sufficiently to induce conductive behavior. Hall measurements indicate that these materials are p-type. In contrast, the use of water vapor as the oxidizing species enabled the formation of n-type semiconducting TiO2 with carrier density on the order of 10(18) cm(-3) and mobility of 10-15 cm(2)/V s. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2275 / 2278
页数:4
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