High-power AlGaInN flip-chip light-emitting diodes

被引：425

作者：

Wierer, JJ ^{[1
]}

Steigerwald, DA ^{[1
]}

Krames, MR ^{[1
]}

O'Shea, JJ ^{[1
]}

Ludowise, MJ ^{[1
]}

Christenson, G ^{[1
]}

Shen, YC ^{[1
]}

Lowery, C ^{[1
]}

Martin, PS ^{[1
]}

Subramanya, S ^{[1
]}

Götz, W ^{[1
]}

Gardner, NF ^{[1
]}

Kern, RS ^{[1
]}

Stockman, SA ^{[1
]}

机构：

[1] LumiLeds Lighting, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1374499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on high-power AlGaInN flip-chip light-emitting diodes (FCLEDs). The FCLED is "flipped-over" or inverted compared to conventional AlGaInN light-emitting diodes (LEDs), and light is extracted through the transparent sapphire substrate. This avoids light absorption from the semitransparent metal contact in conventional epitaxial-up designs. The power FCLED has a large emitting area (similar to0.70 mm(2)) and an optimized contacting scheme allowing high current (200-1000 mA, J similar to 30-143 A/cm(2)) operation with low forward voltages (similar to2.8 V at 200 mA), and therefore higher power conversion ("wall-plug") efficiencies. The improved extraction efficiency of the FCLED provides 1.6 times more light compared to top-emitting power LEDs and ten times more light than conventional small-area (similar to0.07 mm(2)) LEDs. FCLEDs in the blue wavelength regime (similar to 435 nm peak) exhibit similar to 21% external quantum efficiency and similar to 20% wall-plug efficiency at 200 mA and with record light output powers of 400 mW at 1.0 A. (C) 2001 American Institute of Physics.

引用

页码：3379 / 3381

页数：3

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