Cycloaddition chemistry of thiophene on the silicon (111)-7x7 surface

被引：31

作者：

Cao, Y

Yong, KS

Wang, ZH

Deng, JF

Lai, YH

Xu, GQ ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Chem, Singapore 119260, Singapore

[2] Fudan Univ, Dept Chem, Shanghai 200433, Peoples R China

来源：

JOURNAL OF CHEMICAL PHYSICS | 2001年 / 115卷 / 07期

关键词：

D O I：

10.1063/1.1386435

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The mechanism of the cycloaddition reaction between thiophene and Si(111)-7x7 has been investigated using thermal desorption spectroscopy (TDS), high resolution electron energy loss spectroscopy (HREELS), electronic electron energy loss spectroscopy (EELS), scanning tunneling microscopy (STM), and PM3 semiempirical calculations. The results show that thiophene binds on Si(111)-7x7 through a [4+2] cycloaddition reaction between the 2, 5 C-atoms of thiophene and the adjacent adatom-rest atom pairs on Si(111)-7x7. Semiempirical PM3 calculations based on the cluster model further confirm this di-sigma bonding configuration. A stepwise surface diradical mechanism has been proposed to account for the regioselective [4+2] cycloaddition reaction. (C) 2001 American Institute of Physics.

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页码：3287 / 3296

页数：10

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