Field-assisted capture of electrons in semi-insulating GaAs

被引：12

作者：

Cola, A ^{[1
]}

Reggiani, L ^{[1
]}

Vasanelli, L ^{[1
]}

机构：

[1] IST NAZL FIS MAT,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.364190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a drift-diffusion modeling of the electric-field profile in semi-insulating n-GaAs detectors accounting for hot-carrier dynamics and the associated kinetics of electrical active traps. From the fitting of the detector active thickness we infer unambiguous evidence of a field-enhanced capture cross section from the two deepest electron traps we attribute to EL2 and EL3 centers. (C) 1997 American Institute of Physics.

引用

页码：997 / 999

页数：3

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