REVISED ROLE FOR THE POOLE-FRENKEL EFFECT IN DEEP-LEVEL CHARACTERIZATION

被引：65

作者：

BUCHWALD, WR ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：958 / 961

页数：4

相关论文

共 25 条

[1] ASGA ANTISITE DEFECT IN GAAS
BACHELET, GB
SCHLUTER, M
BARAFF, GA
[J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547
[2] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343
[3] BOURGOIN J, 1983, POINT DEFECTS SEMICO, V2, P199
[4] NEW METASTABLE DEFECTS IN GAAS
BUCHWALD, WR
JOHNSON, NM
TROMBETTA, LP
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 1007 - 1009
[5] CHANTRE A, 1983, MATER RES SOC S P, V14, P547
[6] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
[7] CARRIER CAPTURE BY MULTIPHONON EMISSION AT EXTRINSIC DEEP CENTERS INDUCED BY SELF-TRAPPING IN GAAS
GOTO, H
ADACHI, Y
IKOMA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1909 - 1923
[8] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[9] SYMMETRY AND ELECTRONIC-PROPERTIES OF THE OXYGEN THERMAL DONOR IN PULLED SILICON
HENRY, PM
FARMER, JW
MEESE, JM
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 454 - 456
[10] OXYGEN-RELATED DONOR STATES IN SILICON
KIMERLING, LC
BENTON, JL
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 410 - 412