SYMMETRY AND ELECTRONIC-PROPERTIES OF THE OXYGEN THERMAL DONOR IN PULLED SILICON

被引：15

作者：

HENRY, PM ^{[1
]}

FARMER, JW ^{[1
]}

MEESE, JM ^{[1
]}

机构：

[1] UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：454 / 456

页数：3

共 10 条

[1] THE OXYGEN RELATED DONOR EFFECT IN SILICON [J].

BENTON, JL ;

KIMERLING, LC ;

STAVOLA, M .

PHYSICA B & C, 1983, 116 (1-3) :271-275

[2]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[3] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].

GOSELE, U ;

TAN, TY .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92

[4] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[5]

KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

[6] OXYGEN-RELATED DONOR STATES IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :410-412

[7] UNIAXIAL-STRESS APPARATUS FOR DEEP LEVEL TRANSIENT SPECTROSCOPY STUDIES [J].

LAMP, CD ;

FARMER, JW ;

MEESE, JM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1984, 55 (02) :210-212

[8] DEFECT SYMMETRY FROM STRESS TRANSIENT SPECTROSCOPY [J].

MEESE, JM ;

FARMER, JW ;

LAMP, CD .

PHYSICAL REVIEW LETTERS, 1983, 51 (14) :1286-1289

[9]

MULLER SH, 1979, I PHYS C SER, V46, P297

[10]

PATEL JR, 1977, SEMICONDUCTOR SILICO, P521

← 1 →