Capacitance of InAs quantum dot arrays in a mean field approach

We present a mean field approach for an array of InAs quantum dots embedded in a capacitor. By assuming a thermodynamical equilibrium between the dots and the closer electrode, we derive the self-consistent equations for the mean dot occupation. The latter includes the Coulomb blockade for isolated dots and the capacitor feedback to the filling of the dots. By this means, we calculate the capacitance versus bias and obtain a satisfactory agreement with recent experimental findings. We succesfully interpret the increase of the splitting and the widths of the first two (S related) capacitance peaks with the capacitor thickness. (C) 1998 Elsevier Science B.V. All rights reserved.