Magnetic-field-enhanced generation of terahertz radiation in semiconductor surfaces

被引：147

作者：

Weiss, C ^{[1
]}

Wallenstein, R ^{[1
]}

Beigang, R ^{[1
]}

机构：

[1] Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期

关键词：

D O I：

10.1063/1.1334940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study of magnetic-field-enhanced THz generation in semiconductor surfaces of InSb, InAs, InP, GaAs, and GaSb is reported. Applying an external magnetic field, the power of the generated THz radiation is increased for all examined semiconductor materials. The use of time-resolved measurements of the THz waveform allows to distinguish between the fraction of radiation originating from the surface depletion field and the fraction that is additionally generated by the magnetic field. It turns out that the power enhancement factor due to the magnetic field is inversely proportional to the effective electron mass. (C) 2000 American Institute of Physics. [S0003-6951(00)04952-4].

引用

页码：4160 / 4162

页数：3

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