N incorporation in InP and band gap bowing of InNxP1-x

The N incorporation behavior in InP grown by gas-source molecular beam epitaxy using a N radical beam source has been investigated. At a given growth temperature, the N composition in InNxP1-x is generally different from the N-2 flow-rate fraction in the vapor phase, and as the N-2 flow-rate fraction increases, it saturates after increasing to a certain paint. This may be due to the small solubility of N in InP. Increasing the growth temperature will result in a loss of N incorporation into the InP as a result of the faster desorption of the N at high temperatures. Optical absorption measurements reveal that the band-gap energy of InNxP1-x decreases drastically, resulting in band-gap bowing. (C) 1996 American Institute of Physics.