INP GROWN ON SI SUBSTRATES WITH GAP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：18

作者：

KOHAMA, Y

KADOTA, Y

OHMACHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.1337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1337 / 1340

页数：4

共 13 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
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[2] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES
ASAI, H
OE, K
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2052 - 2056
[3] HETERO-EPITAXIAL GROWTH OF INP ON SI SUBSTRATES BY LP-MOVPE
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AKIYAMA, M
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[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 523 - 526
[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671
[5] QUALITY IMPROVEMENT OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAP ON SI BY ASH3 PREFLOW
KOHAMA, Y
UCHIDA, K
SOGA, T
JIMBO, T
UMENO, M
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (10) : 862 - 864
[6] KOHAMA Y, IN PRESS J ELECTROCH
[7] OHMACHI Y, 1988 MAT RES SOC S P
[8] OKAMOTO H, 1988, 20TH P IEEE PVSC LAS, P475
[9] HIGH-QUALITY GAINASP INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON SUBSTRATES
RAZEGHI, M
OMNES, F
DEFOUR, M
MAUREL, P
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (03) : 209 - 211
[10] MOCVD GROWTH OF INP ON 4-INCH SI SUBSTRATE WITH GAAS INTERMEDIATE LAYER
SEKI, A
KONUSHI, F
KUDO, J
KAKIMOTO, S
FUKUSHIMA, T
KOBA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1587 - L1589

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