QUALITY IMPROVEMENT OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAP ON SI BY ASH3 PREFLOW

被引：35

作者：

KOHAMA, Y ^{[1
]}

UCHIDA, K ^{[1
]}

SOGA, T ^{[1
]}

JIMBO, T ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL, SHOWA KU, NAGOYA, AICHI 466, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.100096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：862 / 864

页数：3

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