NEW HYDRIDE VAPOR-PHASE EPITAXY FOR GAP GROWTH ON SI

被引：46

作者：

MORI, H

OGASAWARA, M

YAMAMOTO, M

TACHIKAWA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 16期

关键词：

D O I：

10.1063/1.98693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1245 / 1247

页数：3

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