MO-CVD GROWTH OF GAP AND GAA1P

被引：26

作者：

BENEKING, H

ROEHLE, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90274-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：79 / 86

页数：8

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[6] EPITAXIAL-GROWTH AND CHARACTERIZATION OF PYROLYTIC-GROWN GAAS1-XPX FOR ELECTROLUMINESCENT DIODES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 656 - 659
[7] GROWTH AND PROPERTIES OF VPE GAP FOR GREEN LEDS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) : 363 - 387
[8] 2-STAGE EPITAXIAL-GROWTH OF GAP ON SPINEL
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[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 239 - 243