THE INFLUENCE OF AMMONIA ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXY OF GALLIUM-PHOSPHIDE

被引：5

作者：

JACOBS, K

SEIFERT, W

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(80)90016-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：701 / 706

页数：6

共 15 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS
BAN, VS
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 19 - &
[3] MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 761 - &
[4] CHERNOV AA, 1977, KRISTALLOGRAFIYA+, V22, P35
[5] CHERNOV AA, 1976, DOKL AKAD NAUK SSSR+, V228, P1083
[6] Devyatykh G.G., 1974, LETUCHIE NEORGANICHE
[7] FAKTOR MM, 1974, GROWTH CRYSTALS VAPO, P168
[8] Diffusion coefficients in gaseous systems
Gilliland, ER
[J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1934, 26 : 681 - 685
[9] MAITLAND GC, 1972, J CHEM ENG DATA, V17, P2
[10] SEIFERT WE, UNPUBLISHED