MOCVD GROWTH AND CHARACTERIZATION OF GAP ON SI

被引：46

作者：

OLSON, JM

ALJASSIM, MM

KIBBLER, A

JONES, KM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90346-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：515 / 523

页数：9

共 8 条

[1]

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[2]

Beneking H., 1977, I PHYS C SER, V33, P51

[3]

BLAKESLEE AE, 1981, Patent No. 4278474

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[6] ELECTRICAL AND OPTICAL-PROPERTIES OF GAP GROWN ON SI BY MOVPE [J].

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OMLING, P ;

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[7] THE GROWTH OF A GAP EPILAYER ON SI SUBSTRATES BY METALLORGANIC CVD [J].

SU, YK .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (11) :2325-2330

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI [J].

WRIGHT, SL ;

KROEMER, H ;

INADA, M .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2916-2927

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