THE GROWTH OF A GAP EPILAYER ON SI SUBSTRATES BY METALLORGANIC CVD

被引：3

作者：

SU, YK

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1982年 / 15卷 / 11期

关键词：

D O I：

10.1088/0022-3727/15/11/024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2325 / 2330

页数：6

共 12 条

[1] HETEROEPITAXIAL GROWTH OF GAP ON SILICON [J].

ANDRE, JP ;

HALLAIS, J ;

SCHILLER, C .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :147-157

[2] CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE [J].

CHANG, CY ;

SU, YK ;

LEE, MK ;

CHEN, LG ;

HOUNG, MP .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :24-29

[3] HETEROEPITAXIAL GROWTH OF GAP ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

GONDA, SI ;

MATSUSHIMA, Y ;

MUKAI, S ;

MAKITA, Y ;

IGARASHI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) :1043-1048

[4]

Hung R., 1979, IBM Technical Disclosure Bulletin, V22

[5] CALCULATION OF LIQUIDUS ISOTHERMS AND COMPONENT ACTIVITIES IN GA-AS-SI AND GA-P-SI TERNARY-SYSTEMS [J].

JORDAN, AS ;

WEINER, ME .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1634-1641

[6] HETERO-EPITAXIAL GROWTH OF GAP ON A SI (100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

KAWANAMI, H ;

SAKAMOTO, T ;

TAKAHASHI, T ;

SUZUKI, E ;

NAGAI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L68-L70

[7]

KROEMER H, 1980, JAPAN J APPL PHYS S, V20, P20

[8] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J].

MANASEVIT, HM .

APPLIED PHYSICS LETTERS, 1968, 12 (04) :156-+

[9]

NOACK J, 1970, PHYS STATUS SOLIDI A, pK229

[10] HETEROEPITAXIAL GROWTH OF GAP FILMS ON SI SUBSTRATES [J].

POGGE, HB ;

KEMLAGE, BM ;

BROADIE, RW .

JOURNAL OF CRYSTAL GROWTH, 1977, 37 (01) :13-22

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