ELECTRICAL AND OPTICAL-PROPERTIES OF GAP GROWN ON SI BY MOVPE

被引：23

作者：

SAMUELSON, L

OMLING, P

GRIMMEISS, HG

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90435-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：340 / 344

页数：5

共 9 条

[1] HETEROEPITAXIAL GROWTH OF GAP ON SILICON [J].

ANDRE, JP ;

HALLAIS, J ;

SCHILLER, C .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :147-157

[2] MO-CVD GROWTH OF GAP AND GAA1P [J].

BENEKING, H ;

ROEHLE, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :79-86

[3]

Bergh A., 1976, LIGHT EMITTING DIODE

[4] HETERO-EPITAXIAL GROWTH OF GALLIUM-PHOSPHIDE ON SILICON [J].

KATODA, T ;

KISHI, M .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :783-796

[5] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J].

KROEMER, H .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11) :1535-1537

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[7] HETEROEPITAXIAL GROWTH OF GAP FILMS ON SI SUBSTRATES [J].

POGGE, HB ;

KEMLAGE, BM ;

BROADIE, RW .

JOURNAL OF CRYSTAL GROWTH, 1977, 37 (01) :13-22

[8] ELECTRICAL AND OPTICAL-PROPERTIES OF DEEP LEVELS IN MOVPE GROWN GAAS [J].

SAMUELSON, L ;

OMLING, P ;

TITZE, H ;

GRIMMEISS, HG .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :164-172

[9]

YANG XZ, 1984, UNPUB

← 1 →