Preparation of La2-xSrxCuO4 single-crystalline films by infrared-heated liquid phase epitaxial technique

被引：4

作者：

Tanaka, I

Ashizawa, K

Tanabe, H

Watauchi, S

Yamanaka, J

机构：

[1] Yamanashi Univ, Inst Inorgan Synth, Yamanashi 4008511, Japan

[2] Japan Sci & Technol Corp, CREST Project, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2001年 / 362卷 / 1-4期

基金：

日本学术振兴会;

关键词：

liquid phase epitaxy; infrared heating; single-crystal growth; cuprate superconductor;

D O I：

10.1016/S0921-4534(01)00667-0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have designed a new liquid phase epitaxial (LPE) technique, infrared heated LPE (IR-LPE) technique, using no crucible to avoid a contamination from it. La2-xSrxCuO4 single-crystalline films were grown on the a(tetra)-axis-orientated bulk single crystals, of Zn- or Ni-doped La2CuO4 by the IR-LPE technique. La2-xSrxCuO4 single-crystalline films of the thickness 35-250 mum and of Sr content 0.08 less than or equal to x less than or equal to 0. 15 were obtained. The superconducting properties in the La2-xSrxCuO4 films were improved to T-c,T-onset approximate to 36 K for x = 0.11, which is 10 K higher than that in the La2-xSrxCuO4 bulk single crystals. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：180 / 185

页数：6

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