The dimers stay intact: a quantitative photoelectron study of the adsorption system Si{100}(2x1)-C2H4

被引：60

作者：

Baumgaertel, P. ^{[1
]}

Lindsay, R. ^{[1
]}

Schaff, O. ^{[1
]}

Giessel, T. ^{[1
]}

Terborg, R. ^{[1
]}

Hoeft, J. T. ^{[1
]}

Polcik, M. ^{[1
,5
]}

Bradshaw, A. M. ^{[1
]}

Carbone, M. ^{[2
]}

Piancastelli, M. N. ^{[2
]}

Zanoni, R. ^{[3
]}

Toomes, R. L. ^{[4
]}

Woodruff, D. P. ^{[4
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Univ Roma Tor Vergata, Dept Chem Sci & Technol, I-00133 Rome, Italy

[3] Univ Roma La Sapienza, Dept Chem, I-00185 Rome, Italy

[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[5] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic

来源：

NEW JOURNAL OF PHYSICS | 1999年 / 1卷

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1088/1367-2630/1/1/320

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using the technique of photoelectron diffraction in the scanned energy mode we show that the Si dimer separation on the Si{100} surface following the adsorption of ethene (ethylene) is 2.36(+/- 0.21) angstrom. This value is only very slightly larger than on the clean surface and shows that the dimer remains intact, thus providing a clear quantitative experimental resolution of a long controversy in the literature. The C-C and C-Si separations are 1.62 +/- 0.08 angstrom and 1.90 +/- 0.01 angstrom, respectively, the former indicating a bond order of less than one.

引用

页码：20.1 / 20.15

页数：15

共 52 条

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