Preparation and dielectric properties of SrBi2Ta2O9 thin films by sol-gel method

被引:13
作者
Hayashi, T [1 ]
Hara, T [1 ]
Sawayanagi, S [1 ]
机构
[1] Shonan Inst Technol, Kanagawa 2518511, Japan
关键词
acetylacetone; films; mixing; sol-gel processes; ferroelectric properties;
D O I
10.1016/S0955-2219(98)00464-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ferroelectric Sr0.7Bi2.2Ta2O9 (SBT) thin films were prepared at 600 and 750 degrees C for 1 h using SET precursor solutions of metal alkoxides with and without an addition of acethylacetone (acac), respectively. Crystalline SET thin films were successfully prepared at 600 degrees C from precursor solutions without an addition of acac. SET thin films prepared at 750 degrees C exhibited a high (105) diffraction intensity with random orientation, and exhibited a bimodal grain structure consisting of stone wall-like grains of 500-860 nm and small grains of 100-300 nm. The addition of acac to precursor solutions promoted a c-axis preferred orientation of SBT. SET thin films with a c-axis preferred orientation showed a bimodal microstructure which consisted of large grains of 200- 300-nm and small grains of about 50 nm. SBT thin films prepared at 750 degrees C from precursor solutions without an addition of acac exhibited epsilon(r) of 119, P-r of 3.1 mu C cm(-2) and E-c of 65.1 kV cm(-1), while those prepared at 750 degrees C from precursor solutions containing acac exhibited epsilon(r) of 205, P-r of 7.2 mu C cm(-2) and E-c of 53.3 kV cm(-1). (C) 1999 Elsevier Science Limited All rights reserved.
引用
收藏
页码:1497 / 1500
页数:4
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