Micro-scale metallization on flexible polyimide substrate by Cu electroplating using SU-8 photoresist mask

被引:26
作者
Cho, SH
Kim, SH
Lee, NE [1 ]
Kim, HM
Nam, YW
机构
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Ctr Adv Plasma Surface Technol, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, Dept Mech Engn, Suwon 440746, South Korea
[4] Samsung Adv Inst Technol, Yongin 449712, Gyeonggi Do, South Korea
关键词
Cu metallization; electroplating; polyimide; gap filling; flexible electronics;
D O I
10.1016/j.tsf.2004.08.081
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Technologies for flexible electronics have been developed to make electronic or microelectromechanical (MEMS) devices on inexpensive and flexible organic substrates. In order to fabricate the interconnect lines between device elements or layers in flexible electronic devices, metallization on the flexible substrate is essential. In this case, the width and conductivity of metallization line are very important for minimizing the size of device. Therefore, the realization of metallization process with the scale of a few micrometers on the flexible substrate is required. In this work, micro-scale metallization lines of Cu were fabricated on the flexible substrate by electroplating using the patterned mask of a negative-tone SU-8 photoresist. Polyimide surface was treated by O-2/Ar atmospheric plasma for the improvement in adhesion between Cr layer and polyimide and in situ sputter deposition of 100-nm-thick Cu seed layers on the sputter-deposited 50-nm-thick Cr adhesion layer was followed. SU-8 photoresist was spin-coated and patterned by photolithography. Electroplating of Cu line, removal of SU-8, and selective wet etch of Cr adhesion and Cu seed layers were carried out. Gap between the Cu lines was successfully filled by spin-coating of polyimide. Micro-scale Cu metal lines with gap filling on the polyimide substrate with a thickness of 6-12 mum and an aspect ratio of 1-3 were successfully fabricated. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:68 / 71
页数:4
相关论文
共 9 条
[1]   Real time resistivity measurements during sputter deposition of ultrathin copper films [J].
Barnat, EV ;
Nagakura, D ;
Wang, PI ;
Lu, TM .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) :1667-1672
[2]   Large-scale complementary integrated circuits based on organic transistors [J].
Crone, B ;
Dodabalapur, A ;
Lin, YY ;
Filas, RW ;
Bao, Z ;
LaDuca, A ;
Sarpeshkar, R ;
Katz, HE ;
Li, W .
NATURE, 2000, 403 (6769) :521-523
[3]   Removal of SU-8 photoresist for thick film applications [J].
Dentinger, PM ;
Clift, WM ;
Goods, SH .
MICROELECTRONIC ENGINEERING, 2002, 61-2 :993-1000
[4]   Electrodeposition of copper from sulfate electrolytes - Effects of thiourea on resistivity and electrodeposition mechanism of copper [J].
Donepudi, VS ;
Venkatachalapathy, R ;
Ozemoyah, PO ;
Johnson, CS ;
Prakash, J .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (02) :C13-C16
[5]   Electrochemical process for advanced package fabrication [J].
Krongelb, S ;
Romankiw, LT ;
Tornello, JA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1998, 42 (05) :575-585
[6]  
*NANO, 2000, MAN NANO
[7]  
Park BN, 2001, J KOREAN PHYS SOC, V38, P232
[8]  
SATOSHI T, 2001, NITTO TECHNICAL REP, V39, P51
[9]  
Zhunag W.W., 2000, IEEE INT TECHN C, P185