Homoepitaxial growth of high-quality Zn-polar ZnO films by plasma-assisted molecular beam epitaxy

被引:106
作者
Kato, H
Sano, M
Miyamoto, K
Yao, T
机构
[1] Stanley Elect Co Ltd, Ctr Res & Dev, Aoba Ku, Yokohama, Kanagawa 2250014, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 8B期
关键词
ZnO; Zn-polar; plasma-assisted MBE; homoepitaxial growth; X-ray diffraction; photoluminescence; residual carrier concentration;
D O I
10.1143/JJAP.42.L1002
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-quality ZnO films have been grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy. With increasing O/Zn ratio from the stoichiometric to the O-rich flux condition, the growth mode and the surface morphology changed from three-dimensional growth with a rough surface to two-dimensional growth with a smooth surface. The minimum linewidth from the (10 (1) over bar0) omega-rocking curve was 100 arcsec, and the n = 2 state of A-exciton was clearly observed in the photoluminescence at 4.2 K. Due to the reduction in the edge-type threading dislocation density, the residual carrier concentration in these homoepitaxial ZnO films was as low as 2.2 x 10(16) cm(-3), which is one order of magnitude lower than that previously reported for heteroepitaxial ZnO films.
引用
收藏
页码:L1002 / L1005
页数:4
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