ESD induced pinned layer reversal in spin-valve GMR heads

被引：30

作者：

Takahashi, M ^{[1
]}

Maeda, T ^{[1
]}

Inage, K ^{[1
]}

Sakai, M ^{[1
]}

Morita, H ^{[1
]}

Matsuzaki, M ^{[1
]}

机构：

[1] TDK Corp, Data Storage Components Business Grp, Nagano 38902, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 04期

关键词：

SV heads; electrostatic discharge (ESD); blocking temperature (Tb);

D O I：

10.1109/20.706603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magnetization direction of the pinned layer in the Spin-Valve giant magnetoresistive (SV) heads has been found to be reversed easily by electrostatic discharge (ESD). Thermal stress and magnetic field from ESD cause this phenomenon. This phenomenon happens only when the bias field direction by ESD current is opposite to the magnetization of the pinned layer. The energy of magnetization reversal of the pinned layer from ESD is found to be a quarter of the ESD breakdown energy. For SV heads which consist of AF film with higher blocking temperature, the energy becomes higher.

引用

页码：1522 / 1524

页数：3

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