Data storage with 0.7 nm recording marks on a crystalline organic thin film by a scanning tunneling microscope

被引:35
作者
Ma, LP [1 ]
Yang, WJ
Xue, ZQ
Pang, SJ
机构
[1] Chinese Acad Sci, Ctr Condensed Matter Phys, Lab Vacuum Phys, Beijing 100080, Peoples R China
[2] Beijing Univ, Dept Chem, Beijing 100871, Peoples R China
[3] Beijing Univ, Dept Elect, Beijing 100871, Peoples R China
关键词
D O I
10.1063/1.122022
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ultrahigh density data storage on a novel organic thin film by scanning tunneling microscope (STM) under ambient conditions is demonstrated. The material, N-(3-nitrobenzyridene)-p-phenylenediamine (NBPDA), is used for preparing thin film by vacuum evaporation method. Crystalline NBPDA films with electrical bistability are obtained by this method. Recording experiment on the films is made by applying voltage pulses between the STM tip and substrate. The recorded marks are 0.7 nm in size, corresponding to a storage density of 10(14) bit/cm(2). Current-voltage characteristic measurement shows that the resistance of the unrecorded region of the NBPDA films is much higher than that of the recorded region. The mechanism of recording is discussed. (C) 1998 American Institute of Physics.
引用
收藏
页码:850 / 852
页数:3
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