Nanometer scale conductance change in a Langmuir-Blodgett film with the atomic force microscope

被引：52

作者：

Yano, K

Kyogaku, M

Kuroda, R

Shimada, Y

Shido, S

Matsuda, H

Takimoto, K

Albrecht, O

Eguchi, K

Nakagiri, T

机构：

[1] Canon Research Center, Atsugi, Kanagawa, 243-01

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.116455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nanometer scale metal/Langmuir-Blodgett (LB) film/metal structure is realized with an atomic force microscope combined with scanning tunneling microscope (AFM/STM). Even in this nanometer scale configuration, increase in conductance can be induced at any point in the LB film by application of a voltage pulse. The AFM/STM observation shows little surface modification has occurred by the voltage application, which shows that the conductance of the LB film changes without pit formation in the LB film or metal cluster deposition from the tip of the probe. (C) 1996 American Institute of Physics.

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页码：188 / 190

页数：3

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