SWITCHING AND MEMORY PHENOMENA IN LANGMUIR-BLODGETT-FILMS WITH SCANNING TUNNELING MICROSCOPE

被引：33

作者：

TAKIMOTO, K

KAWADE, H

KISHI, E

YANO, K

SAKAI, K

HATANAKA, K

EGUCHI, K

NAKAGIRI, T

机构：

[1] Canon Research Center, Canon Inc., Atsugi, Kanagawa 243-01, 5-1, Morinosato

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 25期

关键词：

D O I：

10.1063/1.108000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current-voltage characteristic has been measured for a probe/Langmuir-Blodgett (LB) film/metal structure with the scanning tunneling microscope (STM). The rapid increase of current and substantial increase in conductance have been found when a critical positive voltage was applied to the probe. A bright spot in the STM image has been observed at the position where the increase in the conductance occurred. The changes in the STM images are attributed to the change in the conductance of LB films themselves rather than the surface topography, and may be associated with the switching phenomena in LB films.

引用

页码：3032 / 3034

页数：3

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