Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen

被引：92

作者：

Yoshimoto, M ^{[1
]}

Yamamoto, H

Huang, W

Harima, H

Saraie, J

Chayahara, A

Horino, Y

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

[2] AIST Kansai, Osaka 5638577, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 17期

关键词：

D O I：

10.1063/1.1622445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The absolute concentration of oxygen in polycrystalline InN was measured using a combination of Rutherford backscattering and x-ray photoemission spectroscopy. Polycrystalline InN was grown on quartz and glassy carbon at 500 degreesC by molecular-beam epitaxy using In metal and activated nitrogen species generated in rf plasma. The optical bandgap of polycrystalline InN increased from 1.55 to 2.27 eV with increasing oxygen concentration from 1% to 6%. Polycrystalline InN with an optical bandgap of 1.9 eV, which has often been reported, contains oxygen of a molar fraction of 3%. (C) 2003 American Institute of Physics.

引用

页码：3480 / 3482

页数：3

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