Novel precursors for the growth of α-In2S3:trisdialkyldithiocarbamates of indium

被引：97

作者：

O'Brien, P ^{[1
]}

Otway, DJ ^{[1
]}

Walsh, JR ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

来源：

THIN SOLID FILMS | 1998年 / 315卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

MOCVD; indium sulfide;

D O I：

10.1016/S0040-6090(97)00691-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of cubic alpha-In2S3 have been deposited on glass, GaAs(100) and InP(111) by low-pressure metal-organic chemical vapour deposition (LP-MOCVD), using novel air-stable precursors of general formulae In(S2CNMeR)(3) [where R = n-Butyl (compound (1)), n-Hexyl (compound (2))]. The predominant phase in all films grown, regardless of substrate or growth temperature, is alpha-In2S3, oriented in the (hhh) direction. The precursor compounds are considerably more volatile than known dialkyldithiocarbamates of indium. (C) 1998 Elsevier Science S.A.

引用

页码：57 / 61

页数：5

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