Photoluminescence of InAs self-organized quantum dots formation on InP substrate by MOCVD

被引：8

作者：

Wang, BZ ^{[1
]}

Jin, Z ^{[1
]}

Zhao, FH ^{[1
]}

Peng, YH ^{[1
]}

Li, ZT ^{[1
]}

Liu, SY ^{[1
]}

机构：

[1] Jilin Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1998年 / 30卷 / 03期

关键词：

D O I：

10.1023/A:1006910212099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present results of photoluminescence (PL) emission from single-layer and multilayer InAs self-organized quantum dots (QDs), which were grown on (001) InP substrate. The room temperature PL peak of the single-layer QDs locates at 1608 nm, and full width at half-maximum (FWHM) of the PL peak is 71 meV. The PL peak of the multilayer QDs locates at 1478 nm, PL intensity of which is stronger than that of singlelayer QDs. The single-layer QD PL spectra also display excited state emission and state filling as the excitation intensity is increased. Low temperature PL spectra show a weak peak between the peaks of QDs and wetting layer (WL), which suggests the recombination between electrons in the WL and holes in the dots.

引用

页码：187 / 192

页数：6

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