Conformable formation of high quality ultra-thin amorphous Ta2O5 gate dielectrics utilizing water assisted deposition (WAD) for sub 50 nm damascene metal gate MOSFET

被引：7

作者：

Inumiya, S ^{[1
]}

Morozumi, Y ^{[1
]}

Yagishita, A ^{[1
]}

Saito, T ^{[1
]}

Gao, DW ^{[1
]}

Choi, D ^{[1
]}

Hasebe, K ^{[1
]}

Suguro, K ^{[1
]}

Tsunashima, Y ^{[1
]}

Arikado, T ^{[1
]}

机构：

[1] Toshiba Corp, Proc & Mfg Engn Ctr, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A conformable formation process of ultra-thin Ta2O5 gate dielectrics, which is applicable to 50 nm damascene gate MOSFETs, was developed. Assisted by H2O, perfect conformability was successfully realized even in the narrow gate groove (50 nm), while maintaining a low Sate leakage. An excellent device performance of S-factor 72mV/decade was obtained in 90 nm MOSFET with amorphous Ta2O5 gate dielectrics of T-eff 1.6 nm.

引用

页码：649 / 652

页数：4

共 4 条

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