Femtosecond coherent emission from GaAs bulk microcavities

被引：9

作者：

Gurioli, M

Bogani, F

Ceccherini, S

Colocci, M

Beltram, F

Sorba, L

机构：

[1] INFM, I-20126 Milan, Italy

[2] Dipartimento Sci Mat, I-20126 Milan, Italy

[3] INFM, I-50139 Florence, Italy

[4] Univ Florence, Dipartimento Energet, I-50139 Florence, Italy

[5] INFM, I-50125 Florence, Italy

[6] Univ Florence, Dipartimento Fis, I-50125 Florence, Italy

[7] Lab Europeo Spettroscopie Non Lineari, I-50125 Florence, Italy

[8] INFM, I-56126 Pisa, Italy

[9] Scuola Normale Super Pisa, I-56126 Pisa, Italy

[10] INFM, Lab Tecnol Avanzate Superf & Catalisi, I-34012 Trieste, Italy

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.59.R5316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The emission from a lambda/2 GaAs bulk microcavity resonantly excited by femtosecond pulses has been characterized by using an interferometric correlation technique. It is found that the emission is dominated by the coherent signal due to light elastically scattered by disorder, and that scattering is predominantly originated from the lower polariton branch.

引用

收藏

页码：R5316 / R5319

页数：4

相关论文

共 21 条

[1] Polariton motional narrowing in semiconductor multiple quantum wells [J].

Baumberg, JJ ;

Heberle, AP ;

Kavokin, AV ;

Vladimirova, MR ;

Kohler, K .

PHYSICAL REVIEW LETTERS, 1998, 80 (16) :3567-3570

[2] Elastic light scattering from semiconductor structures: Localized versus propagating intermediate electronic excitations [J].

Belitsky, VI ;

Cantarero, A ;

Pavlov, ST ;

Gurioli, M ;

Bogani, F ;

Vinattieri, A ;

Colocci, M .

PHYSICAL REVIEW B, 1995, 52 (23) :16665-16675

[3] Coherent versus incoherent resonant emission: an experimental method for easy discrimination and measurement [J].

Ceccherini, S ;

Colocci, M ;

Gurioli, M ;

Bogani, F .

PURE AND APPLIED OPTICS, 1998, 7 (06) :1289-1300

[4] Influence of structural disorder and light coupling on the excitonic response of semiconductor microcavities [J].

Ell, C ;

Prineas, J ;

Nelson, TR ;

Park, S ;

Gibbs, HM ;

Khitrova, G ;

Koch, SW ;

Houdré, R .

PHYSICAL REVIEW LETTERS, 1998, 80 (21) :4795-4798

[5] Coherent vs incoherent emission from semiconductor structures after resonant femtosecond excitation [J].

Gurioli, M ;

Bogani, F ;

Ceccherini, S ;

Colocci, M .

PHYSICAL REVIEW LETTERS, 1997, 78 (16) :3205-3208

[6] Resonant Rayleigh scattering in quantum well structures [J].

Gurioli, M ;

Bogani, F ;

Vinattieri, A ;

Colocci, M ;

Belitsky, VI ;

Cantarero, A ;

Pavlov, ST .

SOLID STATE COMMUNICATIONS, 1996, 97 (05) :389-394

[7] Weak localization of exciton polaritons in a quantum well [J].

Hanamura, E ;

Norris, TB .

PHYSICAL REVIEW B, 1996, 54 (04) :R2292-R2295

[8] Resonant Rayleigh scattering versus incoherent luminescence in semiconductor microcavities [J].

Hayes, GR ;

Haacke, S ;

Kauer, M ;

Stanley, RP ;

Houdre, R ;

Oesterle, U ;

Deveaud, B .

PHYSICAL REVIEW B, 1998, 58 (16) :R10175-R10178

[9] Combined influence of design and carrier scattering on the ultrafast emission dynamics of quantum well microcavity lasers [J].

Jahnke, F ;

Schneider, HC ;

Koch, SW .

APPLIED PHYSICS LETTERS, 1996, 69 (09) :1185-1187

[10] TIME-RESOLVED VACUUM RABI OSCILLATIONS IN A SEMICONDUCTOR QUANTUM MICROCAVITY [J].

NORRIS, TB ;

RHEE, JK ;

SUNG, CY ;

ARAKAWA, Y ;

NISHIOKA, M ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1994, 50 (19) :14663-14666