Combined influence of design and carrier scattering on the ultrafast emission dynamics of quantum well microcavity lasers

被引:15
作者
Jahnke, F [1 ]
Schneider, HC [1 ]
Koch, SW [1 ]
机构
[1] UNIV MARBURG,CTR MAT SCI,D-35032 MARBURG,GERMANY
关键词
D O I
10.1063/1.117405
中图分类号
O59 [应用物理学];
学科分类号
摘要
A microscopic theory for vertical-cavity surface-emitting lasers (VCSELs) with quantum-well active layers is applied to study the transient gain dynamics, nonequilibrium carrier effects and the influence of the laser design. We investigate how the laser response on femtosecond pulse excitation can be controlled in terms of (i) excitation conditions of the VCSEL, (ii) the mirror design, which allows to change the cavity quality and the resonance frequency, and (iii) the number and position of active semiconductor quantum-wells. (C) 1996 American Institute of Physics.
引用
收藏
页码:1185 / 1187
页数:3
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