OBSERVATION OF CARRIER HEATING IN A 1.5 MU-M BAND MULTI-QUANTUM-WELL SEMICONDUCTOR-LASER AMPLIFIER BY TIME-RESOLVED MEASUREMENT FOR AMPLIFIED SPONTANEOUS EMISSION-SPECTRUM

被引：7

作者：

NIDO, M

SUZUKI, A

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaragi 305, 34, Miyukigaoka

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.111060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time development of electron temperature in 1.5 mu m band multi-quantum-well (MQW) semiconductor laser amplifier is observed. The time development of an amplified spontaneous emission (ASE) spectrum triggered by a pump optical pulse with a 1.54 mu m wavelength is observed with a time resolution of 2 ps. The electron temperature estimated from the ASE spectrum showed a fast rise up to 480 K, due to stimulated emission induced by the pump optical pulse, followed by a two-step decrease with a time scale over 20 ps. The slow carrier cooling shows that the carrier is heated due to the carrier transport in the MQW.

引用

收藏

页码：681 / 683

页数：3

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