Strain-induced crossover of the metal-insulator transition in perovskite manganites

被引:102
作者
Ogimoto, Y [1 ]
Nakamura, M
Takubo, N
Tamaru, H
Izumi, M
Miyano, K
机构
[1] Sharp Co Ltd, Devices Technol Res Labs, Nara 6328567, Japan
[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538904, Japan
来源
PHYSICAL REVIEW B | 2005年 / 71卷 / 06期
关键词
D O I
10.1103/PhysRevB.71.060403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The essential role of strain in determining the electronic states of perovskite manganites is clearly demonstrated in the form of anisotropic and substrate-dependent crossover of a first-order phase transition in charge-orbital ordered epitaxial thin films of (Nd1-xPrx)(0.5)Sr0.5MnO3. An application of (110)-oriented epitaxial growth technique allows the structural flexibility indispensable for the large anisotropic lattice deformation at the first-order transition. The technique enables us to fine-tune the Jahn-Teller distortion for manipulating the metal-insulator transition in thin films, a first step toward the strongly correlated electron devices.
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页数:4
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共 24 条
[1]   Strain-induced metal-insulator phase coexistence in perovskite manganites [J].
Ahn, KH ;
Lookman, T ;
Bishop, AR .
NATURE, 2004, 428 (6981) :401-404
[2]   Strain selection of charge and orbital ordering patterns in half-doped manganites -: art. no. 100401 [J].
Calderón, MJ ;
Millis, AJ ;
Ahn, KH .
PHYSICAL REVIEW B, 2003, 68 (10)
[3]   Anisotropic magnetoresistance in tetragonal La1-xCaxMnO delta thin films [J].
Eckstein, JN ;
Bozovic, I ;
ODonnell, J ;
Onellion, M ;
Rzchowski, MS .
APPLIED PHYSICS LETTERS, 1996, 69 (09) :1312-1314
[4]   Phase diagram of tetragonal manganites [J].
Fang, Z ;
Solovyev, IV ;
Terakura, K .
PHYSICAL REVIEW LETTERS, 2000, 84 (14) :3169-3172
[5]   Stripe-type charge ordering in the metallic A-type antiferromagnet Pr0.5Sr0.5MnO3 [J].
Kajimoto, R ;
Yoshizawa, H ;
Tomioka, Y ;
Tokura, Y .
PHYSICAL REVIEW B, 2002, 66 (18) :1-4
[6]   Hole-concentration-induced transformation of the magnetic and orbital structures in Nd1-xSrxMnO3 [J].
Kajimoto, R ;
Yoshizawa, H ;
Kawano, H ;
Kuwahara, H ;
Tokura, Y ;
Ohoyama, K ;
Ohashi, M .
PHYSICAL REVIEW B, 1999, 60 (13) :9506-9517
[7]   Hysteretic magnetoresistance in Nd1-xSrxMnO3 films with controlled carrier density [J].
Kasai, M ;
Kuwahara, H ;
Moritomo, Y ;
Tomioka, Y ;
Tokura, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (4B) :L489-L492
[8]   Magnetic ordering and relation to the metal-insulator transition in Pr1-xSrxMnO3 and Nd1-xSrxMnO3 with x similar to 1/2 [J].
Kawano, H ;
Kajimoto, R ;
Yoshizawa, H ;
Tomioka, Y ;
Kuwahara, H ;
Tokura, Y .
PHYSICAL REVIEW LETTERS, 1997, 78 (22) :4253-4256
[9]   ATOMIC CONTROL OF THE SRTIO3 CRYSTAL-SURFACE [J].
KAWASAKI, M ;
TAKAHASHI, K ;
MAEDA, T ;
TSUCHIYA, R ;
SHINOHARA, M ;
ISHIYAMA, O ;
YONEZAWA, T ;
YOSHIMOTO, M ;
KOINUMA, H .
SCIENCE, 1994, 266 (5190) :1540-1542
[10]   Orbital-state-mediated phase-control of manganites [J].
Konishi, Y ;
Fang, Z ;
Izumi, M ;
Manako, T ;
Kasai, M ;
Kuwahara, H ;
Kawasaki, M ;
Terakura, K ;
Tokura, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1999, 68 (12) :3790-3793