Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region -: art. no. 173109

被引：26

作者：

Bogaart, EW ^{[1
]}

Nötzel, R ^{[1
]}

Gong, Q ^{[1
]}

Haverkort, JEM ^{[1
]}

Wolter, JH ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA, Interuniv Res Inst, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 17期

关键词：

D O I：

10.1063/1.1915527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quantum dots (QDs), emitting in the 1.55 mu m wavelength region, is investigated by means of time-resolved pump-probe differential reflection spectroscopy at room temperature. We observe ultrafast carrier capture and subsequential carrier relaxation into the QD ground state within 2.5 ps. The carrier lifetime in the QDs strongly depends on the QD optical transition energy within the QD ensemble as well as the carrier density, and ranges from 560 up to 2600 ps. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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