InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

被引：24

作者：

Gong, Q ^{[1
]}

Nötzel, R ^{[1
]}

van Veldhoven, PJ ^{[1
]}

Eijkemans, TJ ^{[1
]}

Wolter, JH ^{[1
]}

机构：

[1] Eindhoven Univ Technol, eiTT COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.1785859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 mum region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 mum is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations. (C) 2004 American Institute of Physics.

引用

页码：1404 / 1406

页数：3

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