Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

被引:159
作者
Paranthoen, C
Bertru, N
Dehaese, O
Le Corre, A
Loualiche, S
Lambert, B
Patriarche, G
机构
[1] INSA Rennes, Phys Solides Lab, F-35043 Rennes, France
[2] France Telecom RD, Lab Concepts & Dispositifs Photon, URA 250, F-92220 Bagneux, France
关键词
D O I
10.1063/1.1356449
中图分类号
O59 [应用物理学];
学科分类号
摘要
A procedure of InAs/InP quantum dots elaboration emitting at 1.55 mum by gas source molecular beam epitaxy is described. It is based on a modification of the capping layer growth which is deposited in two steps, separated by a growth interruption under phosphorus flux. The main effect of this two step capping layer growth is to reduce the height of the biggest islands and thus to decrease the photoluminescence linewidth of the quantum dots emission line. Transmission electron microscopy and photoluminescence experiments show that quantum dots structure are still present after growth interruption under phosphorus flux and that the photoluminescence linewidth at 1.55 mum is reduced from 120 to 50 meV, thanks to this procedure. (C) 2001 American Institute of Physics.
引用
收藏
页码:1751 / 1753
页数:3
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