SYSTEMATIC STUDIES ON THE EFFECT OF GROWTH INTERRUPTIONS FOR GAINAS/INP QUANTUM WELLS GROWN BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：73

作者：

WANG, TY

REIHLEN, EH

JEN, HR

STRINGFELLOW, GB

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

[2] UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5376 / 5383

页数：8

共 59 条

[1]

ANTREASYAN A, 1986, APPL PHYS LETT, V49, P324

[2] COMPARATIVE-STUDY OF THE GROWTH-PROCESSES OF GAAS, ALGAAS, INGAAS, AND INALAS LATTICE MATCHED AND NONLATTICE MATCHED SEMICONDUCTORS USING HIGH-ENERGY ELECTRON-DIFFRACTION [J].

BERGER, PR ;

BHATTACHARYA, PK ;

SINGH, J .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2856-2860

[3] ALGAAS GAAS QUANTUM-WELLS WITH HIGH CARRIER CONFINEMENT AND LUMINESCENCE EFFICIENCIES BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

BERTOLET, DC ;

HSU, JK ;

LAU, KM .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) :120-125

[4] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION [J].

BIMBERG, D ;

MARS, D ;

MILLER, JN ;

BAUER, R ;

OERTEL, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1014-1021

[5] RESONANT RAMAN-SCATTERING IN IN.53GA.47AS/INP(100) QUANTUM-WELLS [J].

BLAND, JAC ;

HAYES, W ;

SKOLNICK, MS ;

MOWBRAY, DJ ;

BASS, SJ .

SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (01) :83-87

[6] GA0.5IN0.5P/GAAS INTERFACES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

BOUR, DP ;

SHEALY, JR ;

MCKERNAN, S .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (04) :1241-1243

[7] HIGH-SPEED INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY [J].

CAMPBELL, JC ;

TSANG, WT ;

QUA, GJ ;

JOHNSON, BC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (03) :496-500

[8] STRUCTURAL AND PHOTOLUMINESCENT PROPERTIES OF GAINAS QUANTUM-WELLS WITH INP BARRIERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CAREY, KW ;

HULL, R ;

FOUQUET, JE ;

KELLERT, FG ;

TROTT, GR .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :910-912

[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION DURING THE GROWTH OF GAAS BY CHEMICAL-BEAM EPITAXY [J].

CHIU, TH ;

TSANG, WT ;

CUNNINGHAM, JE ;

ROBERTSON, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :642-643

[10] OBSERVATION OF ONE MONOLAYER SIZE FLUCTUATIONS IN A GAAS/GAALAS SUPERLATTICE [J].

DEVEAUD, B ;

EMERY, JY ;

CHOMETTE, A ;

LAMBERT, B ;

BAUDET, M .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1078-1080

← 1 2 3 4 5 6 →