SYSTEMATIC STUDIES ON THE EFFECT OF GROWTH INTERRUPTIONS FOR GAINAS/INP QUANTUM WELLS GROWN BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：73

作者：

WANG, TY

REIHLEN, EH

JEN, HR

STRINGFELLOW, GB

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

[2] UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5376 / 5383

页数：8

共 59 条

[31]

RAZEGHI M, 1985, I PHYS C SER, V74, P379

[32] GAINAS-INP MULTIQUANTUM WELL STRUCTURES GROWN BY METALORGANIC GAS-PHASE EPITAXY WITH ADDUCTS [J].

SCHOLZ, F ;

WIEDEMANN, P ;

BENZ, KW ;

TRANKLE, G ;

LACH, E ;

FORCHEL, A ;

LAUBE, G ;

WEIDLEIN, J .

APPLIED PHYSICS LETTERS, 1986, 48 (14) :911-912

[33] INVESTIGATION OF THE PROPERTIES OF ORGANOMETALLIC VAPOR-PHASE EPITAXIALLY GROWN ALGAAS/GAAS HETEROSTRUCTURES USING RAMAN-SCATTERING [J].

SHEALY, JR ;

SCHAUS, CF ;

WICKS, GW .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :125-127

[34] DETERMINATION OF MICROSCOPIC STRUCTURAL QUALITY OF MOLECULAR-BEAM EPITAXIAL GROWN GAAS ALGAAS INTERFACE BY HIGH-RESOLUTION PHOTOLUMINESCENCE SPECTROSCOPY [J].

SINGH, J ;

BAJAJ, KK ;

REYNOLDS, DC ;

LITTON, CW ;

YU, PW ;

MASSELINK, WT ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1061-1064

[35] OPTICAL-PROPERTIES OF INGAAS-INP SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SKOLNICK, MS ;

TAPSTER, PR ;

BASS, SJ ;

APSLEY, N ;

PITT, AD ;

CHEW, NG ;

CULLIS, AG ;

ALDRED, SP ;

WARWICK, CA .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1455-1457

[36] INGAAS-INP MULTIPLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SKOLNICK, MS ;

TAYLOR, LL ;

BASS, SJ ;

PITT, AD ;

MOWBRAY, DJ ;

CULLIS, AG ;

CHEW, NG .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :24-26

[37] HIGHLY RESOLVED EXCITONIC SPECTRA IN GAAS/ALGAAS SUPERLATTICES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

SKROMME, BJ ;

BHAT, R ;

KOZA, MA .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :990-992

[38] HIGH-CURRENT-GAIN INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY [J].

SUGIURA, O ;

DENTAI, AG ;

JOYNER, CH ;

CHANDRASEKHAR, S ;

CAMPBELL, JC .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :253-255

[39] ATOMISTIC MODELS OF INTERFACE STRUCTURES OF GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS GROWN BY INTERRUPTED AND UNINTERRUPTED MBE [J].

TANAKA, M ;

SAKAKI, H .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :153-158

[40] ATOMIC-SCALE STRUCTURES OF TOP AND BOTTOM HETEROINTERFACES IN GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS PREPARED BY MOLECULAR-BEAM EPITAXY WITH GROWTH INTERRUPTION [J].

TANAKA, M ;

SAKAKI, H ;

YOSHINO, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L155-L158

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