REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION DURING THE GROWTH OF GAAS BY CHEMICAL-BEAM EPITAXY

被引:5
作者
CHIU, TH [1 ]
TSANG, WT [1 ]
CUNNINGHAM, JE [1 ]
ROBERTSON, A [1 ]
机构
[1] AT&T ENGN RES CTR,PRINCETON,NJ 08540
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词
D O I
10.1116/1.584377
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:642 / 643
页数:2
相关论文
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[1]   GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY [J].
CHIU, TH ;
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JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2302-2307
[2]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS [J].
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[3]  
ROBERTSON A, 1987, 8TH MOL BEAM EP WORK
[4]   OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING CHEMICAL BEAM EPITAXY [J].
TSANG, WT ;
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ROBERTSON, A .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1376-1378