OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING CHEMICAL BEAM EPITAXY

被引：84

作者：

TSANG, WT ^{[1
]}

CHIU, TH ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

ROBERTSON, A ^{[1
]}

机构：

[1] AT&T ENGN,RES CTR,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 19期

关键词：

D O I：

10.1063/1.97861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1376 / 1378

页数：3

共 14 条

[1] OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100)
CHEN, P
KIM, JY
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CHO, NM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 890 - 895
[2] CHIU TW, UNPUB
[3] TEMPORAL INTENSITY VARIATIONS IN RHEED PATTERNS DURING FILM GROWTH OF GAAS BY MBE
DOBSON, PJ
NORTON, NG
NEAVE, JH
JOYCE, BA
[J]. VACUUM, 1983, 33 (10-1) : 593 - 596
[4] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[5] HARRIS JJ, 1981, SURF SCI, V108, pL444, DOI 10.1016/0039-6028(81)90440-4
[6] RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS
JOYCE, BA
DOBSON, PJ
NEAVE, JH
WOODBRIDGE, K
ZHANG, J
LARSEN, PK
BOLGER, B
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 423 - 438
[7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS
LEWIS, BF
GRUNTHANER, FJ
MADHUKAR, A
LEE, TC
FERNANDEZ, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1317 - 1322
[8] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 179 - 184
[9] Robertson A. P. M, UNPUB
[10] A STUDY OF NOVEL GROWTH APPROACHES TO INFLUENCE THE GROWTH-MECHANISM AND INTERFACE QUALITY IN HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
SINGH, J
DUDLEY, S
BAJAJ, KK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 878 - 883

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