INAS/INP STRAINED SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

Strained InAs/InP single quantum wells of nominal thickness 1-11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1-3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.