GROWTH AND PROPERTIES OF INASP ALLOYS PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：19

作者：

HUANG, KH ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 92卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(88)90040-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：547 / 552

页数：6

相关论文

共 8 条

[1] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX
ANTYPAS, GA
YEP, TO
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3201 - &
[2] EHRENREICH H, 1959, J PHYS CHEM SOLIDS, V13, P97
[3] INASSBP-INAS SUPER-LATTICE GROWN BY ORGANOMETALLIC VPE METHOD
FUKUI, T
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : L551 - L554
[4] ELECTRONIC AND OPTICAL-PROPERTIES OF FE-DOPED INP PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
HUANG, K
WESSELS, BW
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4342 - 4344
[5] INASXP1-X/INP PHOTODIODES PREPARED BY MOLECULAR-BEAM EPITAXY
LEE, TP
BURRUS, CA
SESSA, WB
TSANG, WT
[J]. ELECTRONICS LETTERS, 1984, 20 (09) : 363 - 364
[6] THERMODYNAMIC ASPECTS OF ORGANOMETALLIC VAPOR-PHASE EPITAXY
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (02) : 225 - 229
[7] GROWTH OF BRIGHT (300 K) LUMINESCENCE INASXP1-X(LAMBDA=1.7-2.1-MU) ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2901 - 2903
[8] HETEROEPITAXIAL GROWTH OF HIGH MOBILITY INASP FROM THE VAPOR-PHASE
WANG, PJ
WESSELS, BW
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 766 - 768