GROWTH OF BRIGHT (300 K) LUMINESCENCE INASXP1-X(LAMBDA=1.7-2.1-MU) ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

TSANG, WT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

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D O I：

10.1063/1.333330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2901 / 2903

页数：3

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[1] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE
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[3] PREPARATION OF 1.78-MU-M WAVELENGTH AL0.2GA0.8SB/GASB DOUBLE-HETEROSTRUCTURE LASERS BY MOLECULAR-BEAM EPITAXY
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[4] 1.3-MU-M WAVELENGTH GAINASP INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[5] HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 467 - 469
[6] EFFECT OF SUBSTRATE-TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
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DITZENBERGER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 118 - 120