PREPARATION OF 1.78-MU-M WAVELENGTH AL0.2GA0.8SB/GASB DOUBLE-HETEROSTRUCTURE LASERS BY MOLECULAR-BEAM EPITAXY

被引：35

作者：

TSANG, WT

OLSSON, NA

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 01期

关键词：

D O I：

10.1063/1.94132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：8 / 10

页数：3

相关论文

共 8 条

[1] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY
CHANG, CA
LUDEKE, R
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761
[2] MOLECULAR-BEAM EPITAXY OF AISB
CHANG, CA
TAKAOKA, H
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 983 - 985
[3] ELECTRONIC-PROPERTIES OF INAS-GASB SUPER-LATTICES
CHANG, LL
ESAKI, L
[J]. SURFACE SCIENCE, 1980, 98 (1-3) : 70 - 89
[4] LOW THRESHOLD HETEROJUNCTION ALGAASSB-GASB LASERS IN THE WAVELENGTH RANGE OF 1.5-1.8 MU-M
DOLGINOV, LM
DRAKIN, AE
DRUZHININA, LV
ELISEEV, PG
MILVIDSKY, MG
SKRIPKIN, VA
SVERDLOV, BN
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 593 - 597
[5] ROOM-TEMPERATURE OPERATION OF THE INGAASSB-ALGAASSB DH LASER AT 1.8 MU-M WAVELENGTH
KOBAYASHI, N
HORIKOSHI, Y
UEMURA, C
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L30 - L32
[6] LAW HD, 1979, I PHYS C SER, V45, P420
[7] NAGANUMA M, 1982, I PHYS C SER, V63, P125
[8] HIGH-THROUGH-PUT, HIGH-YIELD, AND HIGHLY-REPRODUCIBLE (ALGA)AS DOUBLE-HETEROSTRUCTURE LASER WAFERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 587 - 589