MOLECULAR-BEAM EPITAXY OF AISB

被引：52

作者：

CHANG, CA

TAKAOKA, H

CHANG, LL

ESAKI, L

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 11期

关键词：

D O I：

10.1063/1.92976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：983 / 985

页数：3

共 8 条

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[2]

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CAPELLA, L ;

LAUDE, L ;

MARTINUZZI, S .

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[4] VAPOR-PHASE GROWTH OF ALSB FROM THE CHLORIDES [J].

DRUILHE, R .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :330-334

[5] POLYTYPE SUPER-LATTICES AND MULTI-HETEROJUNCTIONS [J].

ESAKI, L ;

CHANG, LL ;

MENDEZ, EE .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :L529-L532

[6] LIQUID-PHASE EPITAXY OF HEAVILY TE DOPED GA1-XALXSB ON GASB [J].

GAUTIER, P ;

JOULLIE, A ;

BOUGNOT, G ;

CHAMPNESS, CH .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :336-344

[7] ALUMINUM ANTIMONIDE THIN FILMS BY COEVAPORATION OF ELEMENTS [J].

JOHNSON, JE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3193-&

[8] GROWTH OF ALSB ON INSULATING SUBSTRATES BY METAL ORGANICS CHEMICAL VAPOR-DEPOSITION [J].

LEROUX, M ;

TROMSONCARLI, A ;

GIBART, P ;

VERIE, C ;

BERNARD, C ;

SCHOULER, MC .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (03) :367-378

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